AP120N04BD
Description
AP120N04BD 40V N-Channel Enhancement Mode MOSFET The AP120N04BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 40V ID =120A RDS(ON) < 3.8mΩ @ VGS=10V (Type：2.8mΩ)
