DESCRIPTION
AP120N04BD 40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =120A RDS(ON) < 3.8mΩ @ VGS=10V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP120N04BD TO-252-3L AP120N04BD XXX YYYY ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 120 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 88 IDM Pulsed Drain Current2 440 EAS Single Pulse Avalanche Energy3 395 IAS Avalanche Current 42 PD@TC=25℃ Total Power Dissipation4 108 TSTG Storage Temperature Range -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 62 1.4 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP120N04BD REV1.0 永源微電子科技有限公司 1 AP120N04BD 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
