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AP120N10D - 100V N-Channel Enhancement Mode MOSFET

General Description

The AP120N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =120A RDS(ON) < 7.5mΩ @ VGS=10V (Type：6.2mΩ).

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Datasheet Details

Part number AP120N10D
Manufacturer APM
File Size 821.67 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP120N10D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP120N10D 100V N-Channel Enhancement Mode MOSFET Description The AP120N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =120A RDS(ON) < 7.5mΩ @ VGS=10V (Type：6.