• Part: AP120N10D
  • Description: 100V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: APM
  • Size: 821.67 KB
Download AP120N10D Datasheet PDF
APM
AP120N10D
Description The AP120N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =120A RDS(ON) < 7.5mΩ @ VGS=10V (Type:6.2mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack TO-252-3L Marking AP120N10D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Rating...