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AP120P06D Datasheet PDF

APM AP120P06D

The AP120P06D uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP120P06D
Datasheet AP120P06D Download
Manufacturer
APM
Description -60V P-Channel Enhancement Mode MOSFET
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AP120P06D datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = -60V ID =-120A RDS(ON) < 7.2mΩ @ VGS=-10V (Type:5.3mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP120P06D TO-252-3L Marking AP120P06D XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -60 ±20 -120 -70 -360 800 51 110 -55 to 150 -55 to 150 62.5 0.69 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP120P06D REV 1.0 永源微電子科技有限公司 1 AP120P06D -60V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min.
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