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AP120P06D - -60V P-Channel Enhancement Mode MOSFET

General Description

The AP120P06D uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 6V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -60V ID =-120A RDS(ON) < 7.2mΩ @ VGS=-10V (Type：5.3mΩ).

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Datasheet Details

Part number AP120P06D
Manufacturer APM
File Size 902.29 KB
Description -60V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP120P06D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP120P06D -60V P-Channel Enhancement Mode MOSFET Description The AP120P06D uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-120A RDS(ON) < 7.2mΩ @ VGS=-10V (Type：5.