DESCRIPTION
AP120P08PIT -80V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -80V ID =-120A RDS(ON) <15mΩ @ VGS=10V (Type：11mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP120P08P TO-220-3L AP120P08P XXX YYYY AP120P08P TO-263-3L AP120P08P XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -80 ±20 -120 -71 -120 881 -29 375 -55 to 150 -55 to 150 62.5 0.33 Qty(PCS) 1000 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP120P08P/T REV1.0 永源微電子科技有限公司 1 AP120P08PIT -80V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ =25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
