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AP130N20MP Datasheet PDF

APM AP130N20MP

The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Part No. AP130N20MP
Datasheet AP130N20MP Download
Manufacturer
APM
Description 200V N-Channel Enhancement Mode MOSFET
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AP130N20MP datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 200V ID =130A RDS(ON) < 23mΩ @ VGS=10V (Type:18mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack AP130N20MP TO-247-3L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDSS ID IDM VGS EAS IAR EAR PD TJ, Tstg RthJC RthJA Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanche Energy note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Marking AP130N20MP Value TO-247-3L 200 130 360 ±20 2000 30 25 450 -55~+150 1.2 40 Qty(PCS) 500 Unit V A A V mJ A mJ W ºC ºC/W ºC/W AP130N20MP RVE1.1 永源微電子科技有限公司 1 AP130N20MP 200V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
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