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AP130N20MP - 200V N-Channel Enhancement Mode MOSFET

General Description

The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • VDS = 200V ID =130A RDS(ON) < 23mΩ @ VGS=10V （Type：18mΩ）.

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Datasheet Details

Part number AP130N20MP
Manufacturer APM
File Size 1.26 MB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP130N20MP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.