AP130N20MP
Description
The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features
VDS = 200V ID =130A
RDS(ON) < 23mΩ @ VGS=10V （Type：18mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
TO-247-3L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDSS ID IDM
VGS EAS IAR EAR PD TJ, Tstg Rth JC Rth JA
Drain-Source Voltage (VGS = 0V) Continuous Drain Current
Pulsed Drain Current (note1) Gate-Source Voltage
Single Pulse Avalanche Energy (note2) Avalanche Current (note1)
Repetitive Avalanche Energy note1) Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range Thermal Resistance,...
