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AP135N03NF - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP135N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =135A RDS(ON) < 1.6mΩ @ VGS=10V （Type：1.3mΩ）.

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Datasheet Details

Part number AP135N03NF
Manufacturer APM
File Size 1.40 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP135N03NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP135N03NF 30V N-Channel Enhancement Mode MOSFET The AP135N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =135A RDS(ON) < 1.6mΩ @ VGS=10V （Type：1.