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AP140N03NF - 35V N-Channel Enhancement Mode MOSFET

General Description

The AP140N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 35V ID =140A RDS(ON) < 1.6mΩ @ VGS=10V (Type:1.4mΩ).

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Datasheet Details

Part number AP140N03NF
Manufacturer APM
File Size 0.98 MB
Description 35V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP140N03NF Datasheet

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Description AP140N03NF 35V N-Channel Enhancement Mode MOSFET The AP140N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 35V ID =140A RDS(ON) < 1.6mΩ @ VGS=10V (Type:1.