DESCRIPTION
AP140N03NF 35V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 35V ID =140A RDS(ON) < 1.6mΩ @ VGS=10V （Type：1.4mΩ） Application Boost driver Brushless motor BLDC Package Marking and Ordering Information Product ID Pack Marking AP140N03NF PDFN5*6-8L AP140N03NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ IDM Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 35 ±20 140 106 672 180 54 81 -55 to 150 -55 to 150 25 1.7 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP140N03NF REV1.0 永源微電子科技有限公司 1 AP140N03NF 35V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Condition Min.
APM
