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AP140N20TLG2 Datasheet PDF

APM AP140N20TLG2

The AP140N20TLG2 uses advanced APM-SGTII technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP140N20TLG2
Datasheet AP140N20TLG2 Download
Manufacturer
APM
Description 200V N-Channel Enhancement Mode MOSFET
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AP140N20TLG2 datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 200V ID =140A RDS(ON) < 11mΩ @ VGS=10V (Type:8.5mΩ) Application DC/DC Converter Power Management Switches BMS/UPS Package Marking and Ordering Information Product ID Pack AP140N20TLG2 TOLLA-8L Marking AP140N20TLG2 XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Rating 200 ±20 140 75 550 2000 45 278 -55 to 150 -55 to 150 0.45 40 Qty(PCS) 200 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP140N20TLG2 REV1.0 永源微電子科技有限公司 1 AP140N20TLG2 200V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃unless otherwise noted) Symbol Parameter Conditions V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V Min.
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