DESCRIPTION
AP150N03NF 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =150A RDS(ON) < 2mΩ @ VGS=10V （Type:1.4mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP150N03NF PDFN5*6-8L AP150N03NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TC=25℃ PD@TA=25℃ Avalanche Current Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 150 78 500 240 55 48 2.6 -55 to 175 -55 to 175 62 25 2.6 Qty(PCS) 5000 Units V V A A A mJ A W...
APM
