DESCRIPTION
AP150N04D 40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =150 A RDS(ON) < 2.4mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP150N04D TO-252-3L AP150N04D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 150 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 90 IDM Pulsed Drain Current2 450 EAS Single Pulse Avalanche Energy3 400 IAS Avalanche Current 40 PD@TC=25℃ Total Power Dissipation4 125 TSTG Storage Temperature Range -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 50 1 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP150N04D RVE1.0 臺灣永源微電子科技有限公司 AP150N04D 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
