APM AP150P02D
The AP150P02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The test condition is VDD=-16V,VGS=-4.5V,L=0.1mH,IAS=-50A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
| Part No. |
AP150P02D |
| Datasheet |
AP150P02D
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| Manufacturer |
 APM |
| Description |
-20V P-Channel Enhancement Mode MOSFET |
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DESCRIPTION
GENERAL FEATURES
VDS = -20V ID =-150A RDS(ON) < 2.5mΩ @ VGS=-4.5V (Type：2.1mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP150P02D TO-252-3L AP150P02D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 IDM Pulsed Drain Current2 Rating -20 ±12 -150 -76 450 EAS Single Pulse Avalanche Energy3 450 IAS PD@TC=25℃ TSTG TJ Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range -50 104 -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 15 RθJC Thermal Resistance Junction-Case1 0.9 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP150P02D REV1.0 永源微電子科技有限公司 1 AP150P02D -20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless ot...
