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AP150P02D - -20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP150P02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -20V ID =-150A RDS(ON) < 2.5mΩ @ VGS=-4.5V (Type：2.1mΩ).

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Datasheet Details

Part number AP150P02D
Manufacturer APM
File Size 782.76 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP150P02D Datasheet
Additional preview pages of the AP150P02D datasheet.

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Full PDF Text Transcription

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AP150P02D -20V P-Channel Enhancement Mode MOSFET Description The AP150P02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-150A RDS(ON) < 2.5mΩ @ VGS=-4.5V (Type：2.
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