DESCRIPTION
AP15N06SI 65V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 65V ID =15A RDS(ON) < 18mΩ @ VGS=10V (Type：13mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP15N06SI SOT89-3L Marking AP15N06SI XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current1,6 ID@TC=100℃ Continuous Drain Current1,6 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating 65 ±20 15 7.2 46 33.8 3.1 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 4.0 125 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP15N06SI REV1.0 永源微電子科技有限公司 1 AP15N06SI 65V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
