Datasheet Details
| Part number | AP15N10D |
|---|---|
| Manufacturer | APM |
| File Size | 682.84 KB |
| Description | 100V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP15N10D Datasheet
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General Description
The AP15N10BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 100V ID =15A RDS(ON) < 100mΩ@ VGS=10V （Type：85mΩ）.