AP18N20F - 200V N-Channel Enhancement Mode MOSFET

APM

General Description

performance and enhance the avalanche energy.

Key Features

VDS = 200V ID =18A RDS(ON) < 150mΩ @ VGS=10V （Type：120mΩ）.

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AP18N20F 200v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP18N20F
Manufacturer	APM
File Size	751.60 KB
Description	200V N-Channel Enhancement Mode MOSFET
Datasheet	AP18N20F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.