AP1N50SI
Description
The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features
VDS = 500V ID =1A
RDS(ON) < 15Ω @ VGS=10V （Type：9Ω）
Application
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT89-3L
AP1N50SI XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
VDSS
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current (note1)
Gate-Source Voltage
±30
Single Pulse Avalanche Energy (note2)
Power Dissipation (TC = 25ºC)
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
Rth JC
Thermal Resistance, Junction-to-Case
Rth JA
Thermal Resistance, Junction-to-Ambient...
