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AP1N50SI - 500V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 500V ID =1A RDS(ON) < 15Ω @ VGS=10V （Type：9Ω）.

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Datasheet preview – AP1N50SI

Datasheet Details

Part number AP1N50SI
Manufacturer APM
File Size 858.76 KB
Description 500V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP1N50SI Datasheet
Additional preview pages of the AP1N50SI datasheet.

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Full PDF Text Transcription

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AP1N50SI 500V N-Channel Enhancement Mode MOSFET Description The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
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