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AP1P02AK - -20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP1P02AK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -20V ID =-1.8A RDS(ON) < 125mΩ @ VGS=-4.5V (Type：95mΩ).

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Datasheet Details

Part number AP1P02AK
Manufacturer APM
File Size 574.72 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP1P02AK Datasheet
Additional preview pages of the AP1P02AK datasheet.

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Full PDF Text Transcription

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Description AP1P02AK -20V P-Channel Enhancement Mode MOSFET The AP1P02AK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-1.8A RDS(ON) < 125mΩ @ VGS=-4.5V (Type：95mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP1P02AK SOT523-3L 1P02AK Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TA=70℃ Continuous Drain Current, VGS @ -4.
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