DESCRIPTION
AP1P02AK -20V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -20V ID =-1.8A RDS(ON) < 125mΩ @ VGS=-4.5V (Type：95mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP1P02AK SOT523-3L 1P02AK ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 IDM Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 Rating -20 ±12 -1.8 -0.9 -8.4 0.9 TSTG Storage Temperature Range -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal resistance, junction-case -55 to 150 125 28 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP1P02AK REV1.0 永源微電子科技有限公司 1 AP1P02AK -20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
