DESCRIPTION
AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =20A RDS(ON) <23mΩ @ VGS=10V （Type：11mΩ） VDS = -20V ID =-18.8A RDS(ON) < 35mΩ @ VGS=-10V（Type：23mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP20G02CDF PDFN3*3-8L Marking AP20G02CDF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±12 ±12 ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 20 -18.8 16.2 -15.5 60 -54 85 78 3.5 3.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 105 RθJC Thermal Resistance Junction-Case1 50 Qty(PCS) 5000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP20G02CDF REV1.0 永源微電子科技有限公司 1 AP20G02CDF 20V N+P-Channel Enhancement Mode...
APM
