DESCRIPTION
AP20N02DF 20V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =20A RDS(ON) < 8.0mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP20N02DF PDFN3*3-8L AP20N02DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDSS VGSS ID ID IDM EAS PD RθJC TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25℃ Continuous Drain Current TC = 100℃ Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Max. 20 ±12 20 15 60 36 31 4.84 -55 to +150 Qty(PCS) 5000 Units V V A A A mJ W ℃/W ℃ AP20N02DF RVE1.0 永源微電子科技有限公司 1 AP20N02DF 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS IDSS IGSS VGS(th) Drain-...
APM
