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AP20N02DF - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

operation with gate voltages as low as 2.5V.

Battery protection or in other Switching application.

Features

  • VDS = 20V ID =20A RDS(ON) < 8.0mΩ @ VGS=10V.

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Datasheet Details

Part number AP20N02DF
Manufacturer APM
File Size 1.28 MB
Description 20V N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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Description AP20N02DF 20V N-Channel Enhancement Mode MOSFET The AP20N02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =20A RDS(ON) < 8.
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