AP20N65MP
Description
The AP20N65MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features
VDS = 650V ID =20A
RDS(ON) < 480mΩ @ VGS=10V （Type：380mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
TO-247-3L
AP20N65MP XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
VDSS
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current (note1)
Gate-Source Voltage
±30
Single Pulse Avalanche Energy (note2)
Avalanche Current (note1)
Repetitive Avalanche Energy note1)
Power Dissipation (TC = 25ºC)
TJ,...
