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AP20P02DF - -20V P-Channel Enhancement Mode MOSFET

General Description

operation with gate voltages as low as 2.5V.

Battery protection or in other Switching application.

Key Features

  • VDS = -20V ID =-20A RDS(ON) < 9mΩ @ VGS=-10V.

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Datasheet Details

Part number AP20P02DF
Manufacturer APM
File Size 2.66 MB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20P02DF Datasheet

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AP20P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-20A RDS(ON) < 9mΩ @ VGS=-10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20P02DF PDFN3*3-8L 20P30 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ PD@TC=70℃ TSTG TJ RθJA RθJA RθJC AP20P30DF Rve3.8 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.