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AP20P02DF Datasheet PDF

APM AP20P02DF

The AP20P02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP20P02DF
Datasheet AP20P02DF Download
Manufacturer
APM
Description -20V P-Channel Enhancement Mode MOSFET
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AP20P02DF datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = -20V ID =-20A RDS(ON) < 9mΩ @ VGS=-10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20P02DF PDFN3*3-8L 20P30 3000

ABSOLUTE MAXIMUM RATINGS

(TA=25℃ unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ PD@TC=70℃ TSTG TJ RθJA RθJA RθJC AP20P30DF Rve3.8 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating Units -20 V ±8 V -20 A -18 A -100 A 29 W 19 -55 to 150 -55 to 150 75 40 4.2 W ℃ ℃ ℃/W ℃/W ℃/W 臺灣永源微電子科技有限公司 1 AP20P02DF -20V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ unless o...
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