DESCRIPTION
GENERAL FEATURES
VDS = 20V ID =1.8A AP2302FI 20V N-Channel Enhancement Mode MOSFET RDS(ON) < 52mΩ @ VGS=10V （Type：45mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP2302FI SOT23L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 2302F Value 20 ±12 1.8 1.0 16 0.35 -55 to 150 -55 to 150 125 100 Qty(PCS) 3000 Unit V V A A A W ℃ ℃ ℃/W ℃/W AP2302FI REV1.0 永源微电子科技有限公司 1 AP2302FI 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ.
APM
