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AP2305CI - -20V P-Channel Enhancement Mode MOSFET

General Description

The AP2305CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -20V ID =-6.0A RDS(ON) < 40mΩ @ VGS=-4.5V (Type：33mΩ).

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Datasheet Details

Part number AP2305CI
Manufacturer APM
File Size 1.03 MB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP2305CI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP2305CI -20V P-Channel Enhancement Mode MOSFET The AP2305CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-6.0A RDS(ON) < 40mΩ @ VGS=-4.5V (Type：33mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP2305CI SOT23L 2305C-AP Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 Rating -20 ±12 -6.