APM AP240N10BT
The AP240N10BP/T uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.| Part No. | AP240N10BT |
|---|---|
| Datasheet | AP240N10BT Download |
| Manufacturer |  APM |
| Description | 100V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
VDS = 100V ID =240A RDS(ON) < 2.9mΩ @ VGS=10V (Type：2.4mΩ) Application Isolated DC Motor control Synchronous-rectification Package Marking and Ordering Information Product ID Pack AP240N10BP TO-220-3L AP240N10BT TO-263-3L Marking AP240N10BP XXX YYYY AP240N10BT XXX YYYYABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current1 ID@TA=70℃ Continuous Drain Current1 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 100 ±20 240 179 1136 1350 52 416 -55 to 150 -55 to 150 40 0.70 Qty(PCS) 1000 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP240N10BP/T REV1.0 永源微電子科技有限公司 1 AP240N10BPIT 100V N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min.
