DESCRIPTION
AP250N03NF 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =250A RDS(ON) < 0.7mΩ @ VGS=10V （Type：0.55mΩ） Application Boost driver Brushless motor BLDC Clip packaging process Package Marking and Ordering Information Product ID Pack Marking AP250N03NF PDFN5*6-8L AP250N03NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 250 220 1500 1332 73 165 -55 to 150 -55 to 150 25 0.75 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP250N03NF REV1.0 永源微電子科技有限公司 1 AP250N03NF 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
