APM AP260N15MP
The AP260N15P/T uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=64A 4、The power dissipation is limited by 150°C junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
| Part No. |
AP260N15MP |
| Datasheet |
AP260N15MP
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| Manufacturer |
 APM |
| Description |
150V N-Channel Enhancement Mode MOSFET |
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DESCRIPTION
GENERAL FEATURES
VDS = 150V ID =260A RDS(ON) < 5.8mΩ @ VGS=10V (Type：4.8mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP260N15P TO-247-3L Marking AP260N15MP XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 150 ±20 260 185 720 1764 64 326 -55 to 150 -55 to 150 0.46 62 Qty(PCS) 1000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP260N15MP RVE1.0 永源微電子科技有限公司 1 AP260N15MP 150V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise note...
