Datasheet4U Logo Datasheet4U.com

AP260N15MP - 150V N-Channel Enhancement Mode MOSFET

General Description

The AP260N15P/T uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 150V ID =260A RDS(ON) < 5.8mΩ @ VGS=10V (Type：4.8mΩ).

📥 Download Datasheet

Datasheet Details

Part number AP260N15MP
Manufacturer APM
File Size 1.43 MB
Description 150V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP260N15MP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP2602 Octave Remote Resistor-programmable Temperature Switches BCD Semiconductor
AP2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP2602GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP2602GY-HF-3 N-channel Enhancement-mode Power MOSFET Advanced Power Electronics
AP2602MT N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Other Datasheets by APM

Part Number Description
AP200N03NF 30V N-Channel Enhancement Mode MOSFET
AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET
AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET
AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET
AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP260N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP260N15P/T uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 150V ID =260A RDS(ON) < 5.8mΩ @ VGS=10V (Type：4.