DESCRIPTION
AP2N7002AL 60V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=60V ID =0.5A RDS(ON) < 1600mΩ @ VGS=10V （Type：1100mΩ） ESD Rating：HBM≥2200V Application Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP2N7002AL SOT323-3L Marking 72K ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TSTG TJ RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 60 ±20 0.5 0.13 1.5 1 350 -55 to 150 -55 to 150 128 15 Qty(PCS) 3000 Units V V A A A mJ mW ℃ ℃ ℃/W ℃/W 1 AP2N7002AL REV1.0 永源微電子科技有限公司 AP2N7002AL 60V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Symbol Parameter Test Condition Min.
APM
