Datasheet Details
| Part number | AP2N7002BI |
|---|---|
| Manufacturer | APM |
| File Size | 896.76 KB |
| Description | 60V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP2N7002BI Datasheet
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General Description
The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS=60V ID =0.35A RDS(ON) < 2200mΩ @ VGS=10V （Type：1700mΩ） ESD Rating：HBM≥2000V.