DESCRIPTION
AP2N7002BI 60V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=60V ID =0.35A RDS(ON) < 2200mΩ @ VGS=10V （Type：1700mΩ） ESD Rating：HBM≥2000V Application Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP2N7002BI SOT23L Marking 7002B ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage 60 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 ±20 0.35 0.10 1.2 PD@TC=25℃ Total Power Dissipation4 0.35 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-ambient 1 357 Qty(PCS) 3000 Units V V A A A mW ℃ ℃ ℃/W AP2N7002BI REV1.0 永源微電子科技有限公司 1 AP2N7002BI 60V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-S...
APM
