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AP2N7002BI Datasheet 60v N-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

Datasheet Details

Part number AP2N7002BI
Manufacturer APM
File Size 896.76 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet AP2N7002BI-APM.pdf

General Description

AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS=60V ID =0.35A RDS(ON) < 2200mΩ @ VGS=10V (Type:1700mΩ) ESD Rating:HBM≥2000V.

AP2N7002BI Distributor