AP2P15MI
Description
-150V P-Channel Enhancement Mode MOSFET
The AP2P15MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -150V ID =-2.7A
RDS(ON) < 780mΩ @ VGS=10V (Type：620mΩ)
Application
Brushless motor Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT-23-3L
AP2P15MI XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Drain-Source Voltage
-150
Gate-Source Voltage
±20
ID@TA=25℃
Continuous Drain Current, -VGS @ -10V1
-2.7
ID@TA=70℃
Continuous Drain Current, -VGS @ -10V1
-1.8
Pulsed Drain Current2
-8.5
Single Pulse Avalanche Energy3
Avalanche Current
PD@TA=25℃ TSTG
Total Power Dissipation4 Storage Temperature...
