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AP2P15MI - -150V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP2P15MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -150V ID =-2.7A RDS(ON) < 780mΩ @ VGS=10V (Type：620mΩ).

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Datasheet Details

Part number AP2P15MI
Manufacturer APM
File Size 1.08 MB
Description -150V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP2P15MI Datasheet
Additional preview pages of the AP2P15MI datasheet.

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Full PDF Text Transcription

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Description AP2P15MI -150V P-Channel Enhancement Mode MOSFET The AP2P15MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -150V ID =-2.7A RDS(ON) < 780mΩ @ VGS=10V (Type：620mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP2P15MI SOT-23-3L AP2P15MI XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID@TA=25℃ Continuous Drain Current, -VGS @ -10V1 -2.
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