DESCRIPTION
AP2P15MI -150V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -150V ID =-2.7A RDS(ON) < 780mΩ @ VGS=10V (Type：620mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP2P15MI SOT-23-3L AP2P15MI XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID@TA=25℃ Continuous Drain Current, -VGS @ -10V1 -2.7 ID@TA=70℃ Continuous Drain Current, -VGS @ -10V1 -1.8 IDM Pulsed Drain Current2 -8.5 EAS Single Pulse Avalanche Energy3 56.5 IAS Avalanche Current 5 PD@TA=25℃ TSTG Total Power Dissipation4 Storage Temperature Range 2 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 125 RθJC Thermal Resistance Junction-Case1 40 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP2P15MI RVE1.0 永源微電子科技有限公司 1 AP2P15MI -150V P-Channel Enhancement Mode MOSFET P-Channel ELECTRICAL CHARACTERISTICS
(TJ =25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
