DESCRIPTION
AP300N08TLG2 80V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 80V ID =300A RDS(ON) < 2.0mΩ VGS=10V （Type：1.6mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP300N08TLG2 TOLLA-8L AP300N08TLG2 XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Total Power Dissipation4 Storage Temperature Range Rating 80 ±20 300 196 1240 1858 347.5 -55 to 175 TJ Operating Junction Temperature Range -55 to 175 RθJA Thermal Resistance Junction-Ambient 0.53 RθJC Thermal Resistance Junction-Case 62.5 Qty(PCS) 2000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W 1 AP300N08TLG2 RVE1.0 永源微電子科技有限公司 AP300N08TLG2 80V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
