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AP300N10T Datasheet PDF

APM AP300N10T

The AP300N10T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP300N10T
Datasheet AP300N10T Download
Manufacturer
APM
Description 100V N-Channel Enhancement Mode MOSFET
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AP300N10T datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 100V ID =300A RDS(ON) <2.2mΩ @ VGS=10V (Type:1.6mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP300N10T TO-263-3L Marking AP300N10T XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Rating 100 ±20 30 210 1248 2340 53.4 390.6 -55 to 175 -55 to 175 0.13 40 Qty(PCS) 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP300N10T RVE1.0 永源微電子科技有限公司 1 AP300N10T 100V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃unless otherwise noted...
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