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AP30N02BF - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

or in other Switching application.

Features

  • VDS = 20V ID =30A RDS(ON) < 8.5mΩ@ VGS=4.5V （Type：7.8mΩ）.

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Datasheet preview – AP30N02BF

Datasheet Details

Part number AP30N02BF
Manufacturer APM
File Size 1.11 MB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30N02BF Datasheet
Additional preview pages of the AP30N02BF datasheet.

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Full PDF Text Transcription

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Description AP30N02BF 20V N-Channel Enhancement Mode MOSFET The AP30N02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =30A RDS(ON) < 8.5mΩ@ VGS=4.5V （Type：7.
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