AP30N02BF Datasheet | APM

Description 20V N-Channel Enhancement Mode MOSFET The AP30N02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =30A RDS(ON) < 8.5mΩ@ VGS=4.5V （Type：7.8mΩ） Application solar road lights Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking QFN2- 2-6L AP30N02BF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 PD@TC=25℃ PD@TA=25℃ Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 20 ±12 30 19 90 30 20.8 2 -55 to 150 -55 to 150 125 6 Qty(PCS)...