DESCRIPTION
AP30N02BF 20V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =30A RDS(ON) < 8.5mΩ@ VGS=4.5V （Type：7.8mΩ） Application solar road lights Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP30N02BF QFN2*2-6L AP30N02BF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 PD@TC=25℃ PD@TA=25℃ Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 20 ±12 30 19 90 30 20.8 2 -55 to 150 -55 to 150 125 6 Qty(PCS) 3000 Units V V A A A mJ W W ℃ ℃ ℃/W ℃/W AP30N02BF REV1.0 永源微電子科技有限公司 1 AP30N02BF 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
