AP30N15T Datasheet | APM

Description AP30N15PIT 150V N-Channel Enhancement Mode MOSFET The AP30N15P/T uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 150V ID =30A RDS(ON) < 78mΩ@ VGS=10V （Type：63mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP30N15P TO-220-3L TO-263-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junctionambient Maximum Thermal Resistance, Junction-case Marking AP30N15P XXX YYYY AP30N15T XXX YYYY Qty(PCS) 1000 800 Rating 150 ±20 30 21 90 60 -55 to 150 -55 to 150 62.5 2.5 Units V V A A A W ℃ ℃ ℃/W ℃/W AP30N15P/T RVE1.0 永源微電子科技有限公司 AP30N15PIT 150V N-Channel Enhancement Mode MOSFET Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS l GSS IDSS...