DESCRIPTION
AP30P10P -100V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -100V ID =-30A RDS(ON) < -110mΩ @ VGS=-10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP30P10P TO-220-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Marking AP30P10P XXX YYYY Rating -100 ±20 -30 -16 -75 157.2 25 96 -55 to 150 -55 to 150 62 1.3 Qty(PCS) 1000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP30P10P RVE1.0 永源微電子科技有限公司 1 AP30P10P -100V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
