APM AP30P20NF
The AP30P20NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. The test condition is VDD =-50V,VGS =-10V,L=0.1mH,IAS =-7.7A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
| Part No. |
AP30P20NF |
| Datasheet |
AP30P20NF
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| Manufacturer |
 APM |
| Description |
-200V P-Channel Enhancement Mode MOSFET |
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DESCRIPTION
AP30P20NF -200V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -200V ID =-30A RDS(ON) < 380mΩ @ VGS=10V (Type：270mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP30P20NF PDFN5*6-8L AP20P20NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage -200 VGS Gate-Source Voltage ±20 ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 -30 -15.8 -37 EAS Single Pulse Avalanche Energy3 45 IAS Avalanche Current 7.7 PD@TA=25℃ TSTG Total Power Dissipation4 Storage Temperature Range 68 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62 RθJC Thermal Resistance Junction-Case1 2.2 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP30P20NF REV1.0 永源微電子科技有限公司 1 AP30P20NF -200V P-Channel Enhancement Mode MOSF...
