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AP3404CI Datasheet PDF

APM AP3404CI

The AP3404CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP3404CI
Datasheet AP3404CI Download
Manufacturer
APM
Description 30V N-Channel Enhancement Mode MOSFET
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AP3404CI datasheet page 1 preview

DESCRIPTION

AP3404CI 30V N-Channel Enhancement Mode MOSFET

GENERAL FEATURES

VDS = 30V ID =5.2A RDS(ON) < 38mΩ @ VGS=10V (Type:29mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3404CI SOT23L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current Continuous Drain Current Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJA Thermal Resistance Junction-Ambient 1 Marking 3404C Rating 30 ±20 5.2 3.5 18 1.25 -55 to 150 -55 to 150 125 85 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP3404CI REV1.0 永源微電子科技有限公司 1 AP3404CI 30V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(B...
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