APM AP3404MI-L
The AP3404MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.| Part No. | AP3404MI-L |
|---|---|
| Datasheet | AP3404MI-L Download |
| Manufacturer |  APM |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP3404MI-L 30V N-Channel Enhancement Mode MOSFETGENERAL FEATURES
VDS = 30V ID =6.2A RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3404MI-L SOT23-3LABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current Continuous Drain Current Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) Marking 3404 Rating 30 ±20 6.2 4.1 20 1.25 -55 to 150 -55 to 150 125 85 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP3404MI-L REV1.0 永源微電子科技有限公司 1 AP3404MI-L 30V N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ.
