DESCRIPTION
AP380N04SLG5 40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =380A RDS(ON) < 1.0mΩ @ VGS=10V （Type：0.75mΩ） Application BMS BLDC UPS Package Marking and Ordering Information Product ID Pack Marking AP380N04SLG5 STOLL-6L AP380N04SLG5 XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS Drain-Source Voltage 40 VGSS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TJ,TSTG RθJA RθJC Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Power Dissipation Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case ±20 380 280 1250 627.2 70 65.7 -55 to 175 40 1.9 Qty(PCS) 2000 Units V V A A A mJ A W °C °C/W ℃/W 1 AP380N04TLG5 REV1.0 永源微電子科技有限公司 AP380N04SLG5 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA Min.
APM
