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AP38N50MP Datasheet PDF

APM AP38N50MP

The AP38N50MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Part No. AP38N50MP
Datasheet AP38N50MP Download
Manufacturer
APM
Description 500V N-Channel Enhancement Mode MOSFET
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AP38N50MP datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 500V ID =38A RDS(ON) < 160mΩ @ VGS=10V (Type:130mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP34N50MP TO-247-3L AP34N50MP XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 500 ID@TC=25°C Continuous Drain Current 30 ID@TC=100°C Continuous Drain Current 38 IDM Pulsed Drain Current (note1) 120 VGS Gate-Source Voltage ±30 EAS Single Pulse Avalanche Energy (note2) 3391 IAR Avalanche Current (note1) 30 PD Power Dissipation (TC = 25ºC) 695 TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 RthJC Thermal Resistance, Junction-to-Case 0.3 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 360 Unit V A A A V mJ A W ºC ºC/W ºC/W AP38N50MP REV1.0 永源微電子科技有限公司 1 AP38N50MP 500V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted)...
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