DESCRIPTION
AP420N03SLG5 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =420A RDS(ON) < 0.8mΩ @ VGS=10V（Type：0.55mΩ） Application Buck Boost Package Marking and Ordering Information Product ID Pack Marking AP420N03SLG5 STOLL-6L AP420N03SLG5 XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 420 ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TJ TSTG RθJA RθJC Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case 307 1312 845 125 160 -55 to 150 25 0.78 Qty(PCS) 2000 Units V V A A A mJ A W °C °C/W ℃/W AP420N03SLG5 REV1.0 永源微電子科技有限公司 1 AP420N03SLG5 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
