DESCRIPTION
AP4410A 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=30V ID =18A RDS(ON) < 10mΩ @ VGS=10V （Type：7.6mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP4410A SOP-8L AP4410A XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 18 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 12 IDM Pulsed Drain Current2 72 EAS Single Pulse Avalanche Energy3 24.2 IAS Avalanche Current 10 PD@TC=25℃ Total Power Dissipation 37.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 85 RθJC Thermal Resistance Junction-Case1 4 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP4410A REV1.0 永源微電子科技有限公司 1 AP4410A 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
