Datasheet4U Logo Datasheet4U.com

AP4410A - 30V N-Channel Enhancement Mode MOSFET

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

  • VDS=30V ID =18A RDS(ON) < 10mΩ @ VGS=10V (Type:7.6mΩ).

📥 Download Datasheet

Datasheet Details

Part number AP4410A
Manufacturer APM
File Size 696.28 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4410A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP4410A 30V N-Channel Enhancement Mode MOSFET The AP4410A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =18A RDS(ON) < 10mΩ @ VGS=10V (Type:7.