DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =6.8A RDS(ON) < 28mΩ @ VGS=10V （Type：20mΩ） VDS = -30V ID =-6.1A RDS(ON) < 50mΩ @ VGS=-10V（Type：42mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP4606B SOP-8L Marking AP4606B XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 6.8 -6.1 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.5 -4.1 IDM Pulsed Drain Current2 18 -18 EAS Single Pulse Avalanche Energy3 22.6 33 IAS PD@TA=25℃ Avalanche Current Total Power Dissipation4 8 -7.5 1.3 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 85 RθJC Thermal Resistance Junction-Case1 65 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP4606B REV1.1 永源微電子科技有限公司 1 AP4606B 30V N+P-Channel Enhancement Mode MOSFET N-Channel ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
