AP4606B
AP4606B is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 30V ID =6.8A
RDS(ON) < 28mΩ @ VGS=10V （Type：20mΩ）
VDS = -30V ID =-6.1A
RDS(ON) < 50mΩ @ VGS=-10V（Type：42mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
SOP-8L
Marking AP4606B XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Drain-Source Voltage
-30
Gate-Source Voltage
±20
±20
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
-6.1
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
-4.1
Pulsed Drain Current2
-18
Single Pulse Avalanche...
