AP4606B Overview
The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
AP4606B datasheet by APM.
| Part number | AP4606B |
|---|---|
| Datasheet | AP4606B-APM.pdf |
| File Size | 1.58 MB |
| Manufacturer | APM |
| Description | 30V N+P-Channel Enhancement Mode MOSFET |
|
|
|
The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ALLPOWER | AP4606 | N+P-Channel MOSFET | ALLPOWER |
| Part Number | Description |
|---|---|
| AP400N08TLG1 | 85V N-Channel Enhancement Mode MOSFET |
| AP40G03NF | 30V N+P-Channel Enhancement Mode MOSFET |
| AP40H03DF2 | 30V N+N-Channel Enhancement Mode MOSFET |
| AP40N10D | 100V N-Channel Enhancement Mode MOSFET |
| AP40N10NF | 100V N-Channel Enhancement Mode MOSFET |
| AP40P10P | -100V P-Channel Enhancement Mode MOSFET |
| AP40P10T | -100V P-Channel Enhancement Mode MOSFET |
| AP420N03SLG5 | 30V N-Channel Enhancement Mode MOSFET |
| AP4410A | 30V N-Channel Enhancement Mode MOSFET |
| AP4435A | 30V P-Channel Enhancement Mode MOSFET |