DESCRIPTION
AP4N80FIP 800V N-Plance Enhancement Mode MOSFET <2.5 Ω@ VGS=10V Application 100% UIS Test Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free Package Marking and Ordering Information Product ID Pack Marking AP4N80F TO-220F-3L AP4N80F XXX YYYY AP4N80P TO-220-3L AP4N80P XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Qty(PCS) 1000 1000 Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Rthj-c Rthj-a Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Rating 800 +30 4 16 32.9 1.92 8 -55 to 150 -55 to 150 3.8 65 Units V V A A W W mJ ℃ ℃ ℃/W ℃/W 1 AP4N80F/P Rve3.8 臺灣永源微電子科技有限公司 AP4N80FIP 800V N-Plance Enhancement Mode MOSFET ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
APM
