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AP50P02CDF Datasheet PDF

APM AP50P02CDF

The AP50P02CDF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP50P02CDF
Datasheet AP50P02CDF Download
Manufacturer
APM
Description -20V P-Channel Enhancement Mode MOSFET
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AP50P02CDF datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = -20V ID =-50A RDS(ON) < 9.0mΩ @ VGS=4.5V (Type:6.1mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP50P02CDF PDFN3*3-8L AP50P02CDF XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TC=70℃ Continuous Drain Current, VGS @ -4.5V1 IDM Pulsed Drain Current2 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -20 ±12 -50 -35 -220 -26.6 70 -55 to 150 -55 to 150 85 3.2 Qty(PCS) 5000 Units V V A A A A W ℃ ℃ ℃/W ℃/W AP50P02CDF REV1.0 永源微電子科技有限公司 1 AP50P02CDF -20V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
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