DESCRIPTION
AP50P03DF -30V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -30V ID =-50A RDS(ON) <13mΩ @ VGS=-10V （Type：8.8mΩ） Only Application Lithium battery protection Use Wireless impact Mobile phone fast charging times ng Package Marking and Ordering Information e Product ID Pack Marking h AP50P03DF PDFN3*3-8L AP50P03DF XXX YYYY gs ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) n Symbol Parameter To VDS Drain-Source Voltage Rating -30 VGS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 ±20 -50 -27 IDM Pulsed Drain Current2 -130 EAS Single Pulse Avalanche Energy3 125 IAS Avalanche Current -50 PD@TC=25℃ Total Power Dissipation4 37 PD@TA=25℃ Total Power Dissipation4 1.67 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 75 RθJC Thermal Resistance Junction-Case1 3.36 Qty(PCS) 5000 Units V V A A A mJ A W W ℃ ℃...
APM
