AP50P03DF
AP50P03DF is -30V P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
-30V P-Channel Enhancement Mode MOSFET
The AP50P03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -30V ID =-50A RDS(ON) <13mΩ @ VGS=-10V （Type：8.8mΩ）
Only
Application
Lithium battery protection
Use
Wireless impact Mobile phone fast charging times ng Package Marking and Ordering Information e Product ID
Pack
Marking h AP50P03DF
PDFN3- 3-8L
AP50P03DF XXX YYYY gs Absolute Maximum Ratings (TC=25℃unless otherwise noted) n Symbol
Parameter
To VDS
Drain-Source Voltage
Rating -30
VGS r ID@TC=25℃ Fo ID@TC=100℃
Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1
±20 -50 -27
Pulsed Drain Current2
-130
Single Pulse Avalanche Energy3
Avalanche Current
-50
PD@TC=25℃
Total Power Dissipation4
PD@TA=25℃
Total Power Dissipation4
TSTG
Storage Temperature Range
-55 to 150
Operating Junction Temperature...
