DESCRIPTION
AP5N06MI 60V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 60V ID =5A RDS(ON) < 38mΩ @ VGS=10V Application Battery protection Load switch Automative lighting Package Marking and Ordering Information Product ID Pack AP5N06MI SOT-23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise note Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Marking NA6-5A Rating 60 ±20 5.8 3.5 18 22 21 1.5 -55 to 150 -55 to 150 85 25 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP5N06MI Rve1.0 臺灣永源微電子科技有限公司 AP5N06MI 60V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
