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AP5N06MI - 60V N-Channel Enhancement Mode MOSFET

General Description

The AP5N06MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 60V ID =5A RDS(ON) < 38mΩ @ VGS=10V.

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Datasheet Details

Part number AP5N06MI
Manufacturer APM
File Size 1.53 MB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP5N06MI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP5N06MI 60V N-Channel Enhancement Mode MOSFET The AP5N06MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.