AP5N06MI
Description
60V N-Channel Enhancement Mode MOSFET
The AP5N06MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 60V ID =5A RDS(ON) < 38mΩ @ VGS=10V
Application
Battery protection Load switch Automative lighting
Package Marking and Ordering Information
Product ID
Pack
SOT-23-3L
Absolute Maximum Ratings (TC=25℃unless otherwise note
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ RθJA RθJC
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1
Marking...
