AP5N10MI-L - 100V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Features

VDS = 100V ID =5A RDS(ON) < 140mΩ @ VGS=10V (Type：115mΩ).

APM

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AP5N10MI-L 100V N-Channel Enhancement Mode MOSFET by APM - Datasheet Preview — Datasheet preview – AP5N10MI-L

Datasheet Details

Part number	AP5N10MI-L
Manufacturer	APM
File Size	590.32 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	AP5N10MI-L Datasheet
Additional preview pages of the AP5N10MI-L datasheet.

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Full PDF Text Transcription

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Description AP5N10MI-L 100V N-Channel Enhancement Mode MOSFET The AP5N10MI-L uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Published: Mar 4, 2025 |