AP5N10MI-L Datasheet | APM

Description 100V N-Channel Enhancement Mode MOSFET The AP5N10MI-L uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =5A RDS(ON) < 140mΩ @ VGS=10V (Type：115mΩ) Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient(steady state)1 RθJA Thermal Resistance Junction-ambient(t<10s)1 Marking 5N10M-L AP Rating 100 ±20 5 3.0 18 3.1 -55 to 150 -55 to 150 135 40 Qty(PCS)...