AP5N10MI-L - 100V N-Channel Enhancement Mode MOSFET

APM

General Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

VDS = 100V ID =5A RDS(ON) < 140mΩ @ VGS=10V (Type：115mΩ).

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AP5N10MI-L 100v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP5N10MI-L
Manufacturer	APM
File Size	590.32 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	AP5N10MI-L Datasheet

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Description AP5N10MI-L 100V N-Channel Enhancement Mode MOSFET The AP5N10MI-L uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.