AP5N50BD Datasheet PDF

APM AP5N50BD

The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

Part No.	AP5N50BD
Datasheet	AP5N50BD Download
Manufacturer	APM
Description	500V N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

GENERAL FEATURES

VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω） Application Use Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) times g Package Marking and Ordering Information n Product ID Pack Marking he AP5N50BD TO-252-3L AP5N50BD XXX YYYY gs

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) n Symbol Parameter Value To VDSS Drain-Source Voltage (VGS = 0V) 500 ID r IDM FoVGS Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage 5 15 ±30 EAS Single Pulse Avalanche Energy (note2) 57 IAR Avalanche Current (note1) 2.4 EAR Repetitive Avalanche Energy note1) 6.4 PD Power Dissipation (TC = 25ºC) 32.9 TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 RthJC RthJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 6.25 62.5 Qty(PCS) 2500 Unit V A A V mJ A mJ W ºC ºC/W ºC/W 1 AP5N50BD RVE1.0 永源微電子科技有限公司 sales.Mr.wang13826508770 AP5N50BD 500V N-Channel Enhancement Mode MOSFET Electrical...