AP5N50BD - 500V N-Channel Enhancement Mode MOSFET

APM

General Description

performance and enhance the avalanche energy.

Key Features

VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω）.

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AP5N50BD 500v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP5N50BD
Manufacturer	APM
File Size	1.28 MB
Description	500V N-Channel Enhancement Mode MOSFET
Datasheet	AP5N50BD Datasheet

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sales.Mr.wang13826508770 www.sztssd.com AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.