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AP5N50BD - 500V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

performance and enhance the avalanche energy.

Features

  • VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω）.

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Datasheet preview – AP5N50BD

Datasheet Details

Part number AP5N50BD
Manufacturer APM
File Size 1.28 MB
Description 500V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP5N50BD Datasheet
Additional preview pages of the AP5N50BD datasheet.

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.
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