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AP5N50CD - 500V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

performance and enhance the avalanche energy.

Features

  • VDS = 500V ID =4.8A RDS(ON) < 3.2Ω @ VGS=10V (Type:2.6Ω).

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Datasheet Details

Part number AP5N50CD
Manufacturer APM
File Size 719.64 KB
Description 500V N-Channel Enhancement Mode MOSFET
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Description AP5N50CD 500V N-Channel Enhancement Mode MOSFET The AP5N50CD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 500V ID =4.8A RDS(ON) < 3.2Ω @ VGS=10V (Type:2.
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