AP5N50CD - 500V N-Channel Enhancement Mode MOSFET

APM

General Description

performance and enhance the avalanche energy.

Key Features

VDS = 500V ID =4.8A RDS(ON) < 3.2Ω @ VGS=10V （Type：2.6Ω）.

📥 Download Datasheet

AP5N50CD 500v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP5N50CD
Manufacturer	APM
File Size	719.64 KB
Description	500V N-Channel Enhancement Mode MOSFET
Datasheet	AP5N50CD Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AP5N50K	N-Channel Power MOSFET	ALLPOWER
AP5N10S	N-Channel Power MOSFET	ALLPOWER
AP50-B10	AC Current transducer AP-B10	LEM
AP50-B420L	AC Current transducer AP-B420L	LEM
AP5002	PWM CONTROL 2A STEP-DOWN CONVERTER	Diodes Incorporated

Other Datasheets by APM

Part Number	Description
AP5N50BD	500V N-Channel Enhancement Mode MOSFET
AP5N06MI	60V N-Channel Enhancement Mode MOSFET
AP5N10MI-L	100V N-Channel Enhancement Mode MOSFET
AP50G03GD	30V N+P-Channel Enhancement Mode MOSFET
AP50H02DF3	20V N+N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description AP5N50CD 500V N-Channel Enhancement Mode MOSFET The AP5N50CD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 500V ID =4.8A RDS(ON) < 3.2Ω @ VGS=10V （Type：2.