DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =60A RDS(ON) < 8.5mΩ @ VGS=10V （Type：6.0mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP60N03D TO-252-3L Marking AP60N03D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range Rating 30 ±20 60 40 92 57.8 34 29 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 -55 to 150 62.5 4.32 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP60N03D RVE3.9 永源微電子科技有限公司 1 AP60N03D 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min.
APM
