AP60N06NF Datasheet | APM

Description 65V N-Channel Enhancement Mode MOSFET The AP60N06NF uses advanced APM-SGTⅠⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 65V ID =60A RDS(ON) < 13mΩ @ VGS=10V (Type：9.5mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack PDFN5- 6-8L Marking AP60N06NF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current1,6 ID@TC=100℃ Continuous Drain Current1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating 65 ±20 60 180 20 31 -55 to 150 RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient...