DESCRIPTION
AP60N06NF 65V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 65V ID =60A RDS(ON) < 13mΩ @ VGS=10V (Type：9.5mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP60N06NF PDFN5*6-8L Marking AP60N06NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current1,6 ID@TC=100℃ Continuous Drain Current1,6 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating 65 ±20 60 24 180 20 31 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 4.0 85 Qty(PCS) 5000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP60N06NF REV1.0 永源微電子科技有限公司 1 AP60N06NF 65V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
