AP60N06NF - 65V N-Channel Enhancement Mode MOSFET

APM

General Description

The AP60N06NF uses advanced APM-SGTⅠⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 65V ID =60A RDS(ON) < 13mΩ @ VGS=10V (Type：9.5mΩ).

📥 Download Datasheet

AP60N06NF 65v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP60N06NF
Manufacturer	APM
File Size	836.53 KB
Description	65V N-Channel Enhancement Mode MOSFET
Datasheet	AP60N06NF Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AP60N03GH	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	Advanced Power Electronics
AP60N03GJ	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	Advanced Power Electronics
AP60N03GP	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	Advanced Power Electronics
AP60N03GP	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	Advanced Power Electronics
AP60N03GP-HF	N-Channel MOSFET	Advanced Power Electronics

Other Datasheets by APM

Part Number	Description
AP60N03D	30V N-Channel Enhancement Mode MOSFET
AP60N04D	40V N-Channel Enhancement Mode MOSFET
AP60N10NF	100V N-Channel Enhancement Mode MOSFET
AP60G02NF	20V N+P-Channel Enhancement Mode MOSFET
AP60H04NF	40V N+N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description AP60N06NF 65V N-Channel Enhancement Mode MOSFET The AP60N06NF uses advanced APM-SGTⅠⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 65V ID =60A RDS(ON) < 13mΩ @ VGS=10V (Type：9.